TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 1.00 kV |
Current Rating | 3.10 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 5.00 kΩ |
Polarity | N-Channel |
Power Dissipation | 200 W |
Breakdown Voltage (Drain to Source) | 1.00 kV |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 3.10 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
9 Pages / 1.5 MByte
International Rectifier
9 Pages / 1.59 MByte
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International Rectifier
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MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 5Ω; ID 3.1A; TO-220AB; PD 125W; VGS +/-20V
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