| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | DIP-4 |
| Drain to Source Resistance (on) (Rds) | 270 mΩ |
| Power Dissipation | 1000 mW |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 360pF @25V(Vds) |
| Input Power (Max) | 1.3 W |
| Fall Time | 8.9 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1.3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Vishay Siliconix
9 Pages / 1.79 MByte
Vishay Siliconix
9 Pages / 1.79 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
Harris
1.3A and 1.1A, 80V and 100V, 0.30 and 0.4Ω, N-Channel Power MOSFETs
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.3A 4Pin HVMDIP
VISHAY
HVMDIP-4 N-CH 200V 600mA 270Ω
Vishay Siliconix
MOSFET N-CH 100V 1.3A 4-DIP
Vishay Semiconductor
VISHAY IRFD123PBF MOSFET Transistor, N Channel, 1.3A, 100V, 270mohm, 10V, 2V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
