| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | DIP-4 |
| Power Dissipation | 1W (Ta) |
| Drain to Source Voltage (Vds) | 200 V |
| Input Capacitance (Ciss) | 140pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Vishay Siliconix
9 Pages / 1.66 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
Intersil
0.6A, 200V, 1.5Ω, N-Channel Power MOSFET
Vishay Siliconix
MOSFET N-CH 200V 600mA 4-DIP
Vishay Semiconductor
MOSFET N-CH 200V 600mA 4-DIP
VISHAY
MOSFET N-CH 200V 600mA 4-DIP
VISHAY
HVMDIP-4 N-CH 200V 600mA 1.5Ω
Vishay Siliconix
MOSFET N-CH 200V 600mA 4-DIP
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5Ω; ID 0.6A; HD-1; PD 1W; VGS +/-20V; VF 2
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