| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 800 mA |
| Case/Package | DIP-4 |
| Power Rating | 1 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 800 mA |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 260pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The IRFD220PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
● Dynamic dV/dt rating
● For automatic insertion
● End stackable
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
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