| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -700 mA |
| Case/Package | DIP-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.3 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -700 mA, -700 mA |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 200pF @25V(Vds) |
| Input Power (Max) | 1.3 W |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 6.29 mm |
| Size-Height | 3.37 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The IRFD9110PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
● For automatic insertion
● End stackable
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