| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -1.00 A |
| Case/Package | DIP-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -1.00 A |
| Rise Time | 29 ns |
| Reverse recovery time | 98 ns |
| Maximum Forward Voltage (Max) | 6.3 V |
| Input Capacitance (Ciss) | 390pF @25V(Vds) |
| Input Power (Max) | 1.3 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 175℃ |
| Power Dissipation (Max) | 1.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 6.29 mm |
| Size-Height | 3.37 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
VISHAY
9 Pages / 1.98 MByte
VISHAY
9 Pages / 1.98 MByte
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