| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39 |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 25 W |
| Part Family | IRFF9230 |
| Drain to Source Voltage (Vds) | -200 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Continuous Drain Current (Ids) | -4.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Lead Length | 14.2 mm |
| Weight | 980 mg |
200V, P-CHANNEL
●The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt
●age control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
●Features:
●Repetitive Avalanche Ratings
●Dynamic dv/dt Rating
●Hermetically Sealed
●Simple Drive Requirements
●Ease of Paralleling
International Rectifier
7 Pages / 0.14 MByte
International Rectifier
7 Pages / 0.12 MByte
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