IRFH5210TR2PBF Datasheet PDF - Infineon

Manufacturer:	Infineon
Category:	MOSFETs
Case Package:	PQFN-8
Description:	PQFN N-CH 100V 10A
Documentation:	IRFH5210TR2PBF Datasheet (9 Pages)Package Outline Dimension on7 Page IRFH5210TR2PBF User Reference Manual Guide (3 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

IRFH5210TR2PBF Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PQFN-8
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	14.9 mΩ
Polarity	N-Channel
Power Dissipation	3.6 W
Part Family	IRFH5210
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	55.0 A, 100 A
Rise Time	9.7 ns
Input Capacitance (Ciss)	2570pF @25V(Vds)
Input Power (Max)	3.6 W
Fall Time	6.5 ns
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	3.6W (Ta), 104W (Tc)