| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | QFN-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0026 Ω |
| Polarity | N-Channel |
| Power Dissipation | 156 W |
| Threshold Voltage | 3.7 V |
| Input Capacitance | 6460 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 6460pF @25V(Vds) |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 156W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.15 mm |
| Size-Width | 5.15 mm |
| Size-Height | 0.85 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFH7085TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC converters and DC-to-AC inverters.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
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