TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 5 Pin |
Case/Package | PQFN-8 |
Power Rating | 78 W |
Number of Positions | 5 Position |
Drain to Source Resistance (on) (Rds) | 0.0025 Ω |
Polarity | N-Channel |
Power Dissipation | 78 W |
Threshold Voltage | 2.2 V |
Input Capacitance | 3174 pF |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 117A |
Rise Time | 37 ns |
Input Capacitance (Ciss) | 3174pF @25V(Vds) |
Fall Time | 26 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 78W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.85 mm |
Size-Width | 5 mm |
Size-Height | 1.17 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFH7446TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for PWM inverter topologies, battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
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International Rectifier
Trans MOSFET N-CH 40V 117A 8Pin QFN EP T/R
International Rectifier
Trans MOSFET N-CH 40V 117A 8Pin QFN EP T/R
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