TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PowerVDFN-8 |
Power Rating | 2.3 W |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.164 Ω |
Polarity | N-CH |
Power Dissipation | 10.4 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Continuous Drain Current (Ids) | 2.3A |
Rise Time | 4.7 ns |
Input Capacitance (Ciss) | 251pF @25V(Vds) |
Input Power (Max) | 2.3 W |
Fall Time | 2.6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 2300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 3.3 mm |
Size-Width | 3.3 mm |
Size-Height | 0.9 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Mosfet Array 2 N-Channel (Dual) 100V 2.3A 2.3W Surface Mount 8-PQFN (3.3x3.3), Power33
Infineon
9 Pages / 0.25 MByte
Infineon
4 Pages / 0.07 MByte
Infineon
2 Pages / 0.04 MByte
International Rectifier
100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
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