TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 5 Pin |
Case/Package | TO-220-5 |
Power Rating | 18 W |
Number of Channels | 2 Channel |
Number of Positions | 5 Position |
Drain to Source Resistance (on) (Rds) | 0.08 Ω |
Polarity | N-Channel |
Power Dissipation | 18 W |
Threshold Voltage | 4.9 V |
Input Capacitance | 810 pF |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Drain to Source) | 150 V |
Continuous Drain Current (Ids) | 8.7A |
Rise Time | 6.6 ns |
Thermal Resistance | 65℃/W (RθJA) |
Input Capacitance (Ciss) | 810pF @25V(Vds) |
Input Power (Max) | 18 W |
Fall Time | 3.1 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 18000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.63 mm |
Size-Width | 4.83 mm |
Size-Height | 9.02 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFI4019H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 200W per channel into 8R load in half-bridge configuration amplifier.
● Reduces the part count by half
● Facilitates better PCB layout
● Low RDS (ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low Qrr for better THD and lower EMI
Infineon
8 Pages / 0.28 MByte
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37 Pages / 2.01 MByte
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International Rectifier
MOSFET, Dual N Ch., Digital Audio, 5Pin TO-220, 150V, 80MOHM, 8.7A, 4.1NC
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