| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 33 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.11 Ω |
| Polarity | N-Channel |
| Power Dissipation | 33 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 640 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 640pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 41W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.75 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.8 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFI530NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.
● Advanced process technology
● Isolated package
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● 2.5kVRMS High voltage isolation
● 4.8mm Sink to lead creepage distance
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