| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.077 Ω |
| Polarity | N-Channel |
| Power Dissipation | 48 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 44 ns |
| Fall Time | 43 ns |
| Operating Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ |
The IRFI540GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
● 4.8mm Sink to lead creepage distance
● -55 to 175°C Operating temperature range
● Dynamic dV/dt rating
● Low thermal resistance
Vishay Semiconductor
9 Pages / 0.25 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
VISHAY
TO-220-3 N-CH 100V 17A 77mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.052Ω; ID 20A; TO-220 Full-Pak; PD 54W
Vishay Semiconductor
Trans MOSFET N-CH 100V 17A 3Pin(3+Tab) TO-220FP
International Rectifier
Trans MOSFET N-CH 100V 20A 3Pin(3+Tab) TO-220FP
International Rectifier
MOSFET N-CH 100V 17A TO220FP
Vishay Siliconix
Trans MOSFET N-CH 100V 17A 3Pin(3+Tab) TO-220 Full-Pak
Vishay Siliconix
MOSFET N-CH 100V 17A TO220FP
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
