| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 4.10 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 0.8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 260pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 4.10 A |
| Rise Time | 22 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 360pF @25V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.63 mm |
| Size-Height | 16.12 mm |
| Operating Temperature | -55℃ ~ 150℃ |
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
Vishay Semiconductor
3 Pages / 0.17 MByte
Vishay Semiconductor
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