| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 4.10 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 4.10 A |
| Rise Time | 22 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 260pF @25V(Vds) |
| Input Power (Max) | 30 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP
VISHAY
9 Pages / 0.3 MByte
VISHAY
8 Pages / 1.71 MByte
International Rectifier
MOSFET N-CH 200V 4.1A TO220FP
Vishay Siliconix
Mosfet n-Ch 200V 4.1A To220fp
Vishay Semiconductor
MOSFET N-CH 200V 4.1A TO220FP
VISHAY
TO-220-3 N-CH 200V 4.1A 800mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ω; ID 4.1A; TO-220 Full-Pak; PD 30W; -55de
International Rectifier
MOSFET N-CH 200V 4.1A TO220FP
Vishay Siliconix
MOSFET N-CH 200V 4.1A TO220FP
Vishay Siliconix
MOSFET N-CH 200V 4.1A TO220FP
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