TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Polarity | P-CH |
Power Dissipation | 42 W |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 7.7A |
Rise Time | 52 ns |
Input Capacitance (Ciss) | 860pF @25V(Vds) |
Input Power (Max) | 42 W |
Fall Time | 39 ns |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ |
VISHAY
8 Pages / 1.45 MByte
VISHAY
8 Pages / 1.42 MByte
VISHAY
TO-220-3P-CH 100V 7.7A 300mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.3Ω; ID -7.7A; TO-220 Full-Pak; PD 42W
Vishay Siliconix
MOSFET P-CH 100V 7.7A TO220FP
International Rectifier
MOSFET P-CH 100V 7.7A TO220FP
Vishay Siliconix
MOSFET P-CH 100V 7.7A TO220FP
Vishay Semiconductor
Trans MOSFET P-CH 100V 7.7A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.3Ω, Id=-7.7A)
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