TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 150 V |
Current Rating | 41.0 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 45 mΩ |
Polarity | N-Channel |
Power Dissipation | 3.1 W |
Part Family | IRFIB41N15D |
Threshold Voltage | 5.5 V |
Input Capacitance | 2520pF @25V |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Drain to Source) | 150 V |
Continuous Drain Current (Ids) | 41.0 A |
Rise Time | 63.0 ns |
Input Capacitance (Ciss) | 2520pF @25V(Vds) |
Input Power (Max) | 48 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.63 mm |
Size-Height | 16.12 mm |
Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
13 Pages / 0.25 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
2 Pages / 0.07 MByte
International Rectifier
Trans MOSFET N-CH 150V 41A 3Pin(3+Tab) TO-220FP Tube
International Rectifier
MOSFET N-CH 150V 41A TO220FP
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