| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.75 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 5.50 A |
| Input Capacitance (Ciss) | 1400pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.8 mm |
The IRFIB6N60APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
● Low gate charge Qg results in simple drive requirement
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● High voltage isolation
Vishay Semiconductor
9 Pages / 0.15 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
VISHAY
Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V
Vishay Semiconductor
VISHAY IRFIB6N60APBF Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V
International Rectifier
Trans MOSFET N-CH 600V 5.5A 3Pin(3+Tab) TO-220
International Rectifier
MOSFET N-CH 600V 5.5A TO220FP
Vishay Siliconix
MOSFET N-CH 600V 5.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 600V 5.5A 3Pin(3+Tab) TO-220FP
Vishay Siliconix
MOSFET N-CH 600V 5.5A TO220FP
Vishay Intertechnology
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3
IRF
Power MOSFET(Vdss=600V, Rds(on)max=0.75Ω, Id=5.5A)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
