TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 3 Ω |
Polarity | N-Channel |
Power Dissipation | 35 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 800 V |
Continuous Drain Current (Ids) | 2.10 A |
Rise Time | 33 ns |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ |
The IRFIBE30GPBF is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware in applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● Low thermal resistance
● Sink to lead creepage
● High voltage isolation
● Dynamic dV/dt rating
Vishay Semiconductor
20 Pages / 2.6 MByte
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