| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 1.20 A |
| Rise Time | 21 ns |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ |
Vishay Semiconductor
3 Pages / 0.06 MByte
VISHAY
TO-220-3 N-CH 900V 1.2A 8Ω
Vishay Semiconductor
VISHAY IRFIBF20GPBF Power MOSFET, N Channel, 1.2A, 900V, 8Ω, 10V, 4V
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220FP
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 900V 1.2A 3Pin(3+Tab) TO-220FP
International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Vishay Intertechnology
Power Field-Effect Transistor, 1.2A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
Vishay Intertechnology
Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IRF
Power MOSFET(Vdss=900V, Rds(on)=8Ω, Id=1.2A)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
