TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 28 mΩ |
Polarity | N-CH |
Power Dissipation | 48000 mW |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 30A |
Rise Time | 120 ns |
Input Capacitance (Ciss) | 2500pF @25V(Vds) |
Fall Time | 86 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 48000 mW |
TYPE | DESCRIPTION |
---|
Operating Temperature | -55℃ ~ 175℃ |
Minimum Packing Quantity | 50 |
This IRFIZ44GPBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 48000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
VISHAY
8 Pages / 1.35 MByte
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