TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 42 W |
Drain to Source Resistance (on) (Rds) | 0.016 Ω |
Polarity | N-CH |
Power Dissipation | 42 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 36A |
Rise Time | 78 ns |
Input Capacitance (Ciss) | 1900pF @25V(Vds) |
Fall Time | 48 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 54W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
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International Rectifier
HEXFET® Power MOSFET VDSS= 55V RDS(on)= 0.016Ω ID= 36A
IRF
Power MOSFET(Vdss=55V, Rds(on)=0.016Ω, Id=36A)
VISHAY
TO-220-3 N-CH 60V 37A 18mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.016Ω; ID 36A; TO-220 Full-Pak; PD 42W; -55de
International Rectifier
MOSFET N-CH 55V 36A TO220FP
International Rectifier
Trans MOSFET N-CH Si 60V 39A 3Pin(3+Tab) TO-220FP
Vishay Semiconductor
Trans MOSFET N-CH 60V 37A 3Pin(3+Tab) TO-220FP
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