TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 2.70 A |
Case/Package | TO-261-4 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.16 Ω |
Polarity | N-Channel |
Power Dissipation | 2.1 W |
Part Family | IRFL014N |
Threshold Voltage | 4 V |
Input Capacitance | 190pF @25V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 1.90 A |
Rise Time | 7.10 ns |
Input Capacitance (Ciss) | 190pF @25V(Vds) |
Input Power (Max) | 1 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.7 mm |
Size-Height | 1.45 mm |
Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
8 Pages / 0.14 MByte
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