| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-261-4 |
| Power Dissipation | 2W (Ta), 3.1W (Tc) |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 300pF @25V(Vds) |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Vishay Siliconix
9 Pages / 0.28 MByte
Vishay Siliconix
9 Pages / 0.28 MByte
VISHAY
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
International Rectifier
Transistor NPN MOS IRFL014 INTERNATIONAL RECTIFIER RoHS Ampere=2.7V=60 SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
Vishay Semiconductor
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Infineon
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.16Ω; ID 1.9A; SOT-223; PD 2.1W; VGS +/-20V
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
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