TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | TO-261-4 |
Power Dissipation | 2W (Ta), 3.1W (Tc) |
Drain to Source Voltage (Vds) | 60 V |
Input Capacitance (Ciss) | 300pF @25V(Vds) |
Input Power (Max) | 2 W |
Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Vishay Siliconix
9 Pages / 0.28 MByte
Vishay Siliconix
9 Pages / 0.28 MByte
Vishay Siliconix
2 Pages / 0.04 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
VISHAY
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
International Rectifier
Transistor NPN MOS IRFL014 INTERNATIONAL RECTIFIER RoHS Ampere=2.7V=60 SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.16Ω; ID 1.9A; SOT-223; PD 2.1W; VGS +/-20V
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.