| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2.1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.075 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 400 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 4A |
| Rise Time | 13.4 ns |
| Input Capacitance (Ciss) | 400pF @25V(Vds) |
| Fall Time | 17.7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
8 Pages / 0.13 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.16 MByte
IRF
Power MOSFET(Vdss=55V, Rds(on)=0.075Ω, Id=2.8A)
International Rectifier
Trans MOSFET N-CH 55V 5.1A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
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International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.075Ω; ID 2.8A; SOT-223; PD 1W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46.2 Milliohms; ID 5.1A; SOT-223; PD 1W; VF 1.3V
International Rectifier
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