| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.50 A |
| Case/Package | SOT-223 |
| Power Rating | 3.1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.54 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 180pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 1.50 A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 180pF @25V(Vds) |
| Fall Time | 9.4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFL110PBF is a 100V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The SOT-223 package is designed for surface-mount using vapour phase, infra-red or wave soldering techniques. Its unique package design allows for easy automatic pick-and place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
● Fast switching
Vishay Semiconductor
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