| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 1.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 960 mA |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 140pF @25V(Vds) |
| Fall Time | 8.9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1 W |
| TYPE | DESCRIPTION |
|---|
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -55℃ ~ 150℃ |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
●FEATURES
●• Surface Mount
●• Available in Tape and Reel
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 0.16 MByte
Vishay Semiconductor
8 Pages / 0.16 MByte
Vishay Semiconductor
8 Pages / 0.58 MByte
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