| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 3.70 A |
| Case/Package | TO-261-4 |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.1 W |
| Part Family | IRFL4105 |
| Threshold Voltage | 4 V |
| Input Capacitance | 660pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 3.70 A |
| Rise Time | 12.0 ns |
| Input Capacitance (Ciss) | 660pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.7 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●N-Channel Power MOSFET up to 7A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
9 Pages / 0.16 MByte
International Rectifier
10 Pages / 0.15 MByte
International Rectifier
Single N-Channel 55V 2.1W 23NC Hexfet Power Mosfet Surface Mount - SOT-223
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ω; ID 3.7A; SOT-223; PD 1W; VGS +/-20V
International Rectifier
MOSFET N-CH 55V 3.7A SOT223
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
