| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.60 A |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.1 W |
| Part Family | IRFL4310 |
| Threshold Voltage | 4 V |
| Input Capacitance | 330pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 1.60 A |
| Rise Time | 18.0 ns |
| Input Capacitance (Ciss) | 330pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.7 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
9 Pages / 0.3 MByte
International Rectifier
Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223
International Rectifier
Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ω; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
International Rectifier
Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223 T/R
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