| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Power Dissipation | 2W (Ta), 3.1W (Tc) |
| Drain to Source Voltage (Vds) | 100 V |
| Input Capacitance (Ciss) | 200pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
2 Pages / 0.04 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
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Vishay Intertechnology
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
VISHAY
SOT-223-3P-CH 100V 1.1A 1.2Ω
Vishay Siliconix
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
VISHAY
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -1.1A; SOT-223; PD 3.1W; VGS +/-2
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
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