| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | -1.10 A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 200pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2500 |
VISHAY
9 Pages / 0.34 MByte
VISHAY
10 Pages / 0.22 MByte
VISHAY
8 Pages / 0.58 MByte
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Intertechnology
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
VISHAY
SOT-223-3P-CH 100V 1.1A 1.2Ω
Vishay Siliconix
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
VISHAY
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -1.1A; SOT-223; PD 3.1W; VGS +/-2
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
