| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.30 A |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.4 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 480 pF |
| Gate Charge | 22.0 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.30 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 480pF @25V(Vds) |
| Input Power (Max) | 2.4 W |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.4W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Fairchild
7 Pages / 0.25 MByte
Fairchild
8 Pages / 0.26 MByte
Fairchild
1 Pages / 0.06 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
Trans MOSFET N-CH 100V 2.3A 4Pin(3+Tab) SOT-223 T/R
ON Semiconductor
Trans MOSFET N-CH 100V 2.3A 4Pin(3+Tab) SOT-223 T/R
ON Semiconductor
Power Field-Effect Transistor
Samsung
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
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