TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 72.0 A |
Case/Package | TO-247-3 |
Drain to Source Resistance (on) (Rds) | 12.0 mΩ (max) |
Polarity | N-CH |
Power Dissipation | 170W (Tc) |
Part Family | IRFP054N |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55.0V (min) |
Continuous Drain Current (Ids) | 81.0 A |
Rise Time | 66 ns |
Input Capacitance (Ciss) | 2900pF @25V(Vds) |
Fall Time | 46 ns |
Power Dissipation (Max) | 170W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
9 Pages / 0.11 MByte
Infineon
270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET N-CH 60V 70A TO-247AC
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
Infineon
Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.014Ω, Id=70*A)
VISHAY
TO-247-3 N-CH 60V 70A 14mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.012Ω; ID 81A; TO-247AC; PD 170W; VGS +/-20V
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