| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 31.0 A |
| Case/Package | TO-247 |
| Power Rating | 180 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.077 Ω |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1700pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 31.0 A |
| Rise Time | 44 ns |
| Fall Time | 43 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
●Features:
● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● Isolated Central Mounting Hole
● 175°C Operating Temperature
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Lead (Pb)-Free Available
Vishay Semiconductor
9 Pages / 1.71 MByte
Vishay Semiconductor
9 Pages / 1.71 MByte
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