TYPE | DESCRIPTION |
---|
Case/Package | TO-3-3 |
Drain to Source Voltage (Vds) | 100 V |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 2270pF @25V(Vds) |
Input Power (Max) | 193 W |
Fall Time | 45 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not For New Designs |
Operating Temperature | -55℃ ~ 175℃ |
N-Channel 100V 43A (Tc) 193W (Tc) Through Hole TO-3PN
ON Semiconductor
7 Pages / 0.25 MByte
International Rectifier
MOSFET N-CH 100V 41A TO-247AC
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IXYS Semiconductor
HIGH VOLTAGE POWER MOSFET DIE
Vishay Siliconix
MOSFET N-CH 100V 41A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
Harris
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Fairchild
Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247
Intersil
40A 100V 0.055Ω N-CH, Si PMOS TO-247
ST Microelectronics
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
Samsung
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.