| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 42.0 A |
| Case/Package | TO-247-3 |
| Drain to Source Resistance (on) (Rds) | 0.036 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Part Family | IRFP150N |
| Input Capacitance | 1900pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 42.0 A |
| Rise Time | 56.0 ns |
| Input Capacitance (Ciss) | 1900pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 15.9 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 40A to 49A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
8 Pages / 0.27 MByte
International Rectifier
23 Pages / 0.55 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
3 Pages / 0.03 MByte
International Rectifier
MOSFET N-CH 100V 41A TO-247AC
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IXYS Semiconductor
HIGH VOLTAGE POWER MOSFET DIE
Vishay Siliconix
MOSFET N-CH 100V 41A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
Harris
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Fairchild
Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247
Intersil
40A 100V 0.055Ω N-CH, Si PMOS TO-247
ST Microelectronics
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
Samsung
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
