IRFP250 Datasheet PDF - Fairchild

General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

●planar, DMOS technology.

●Features

●• 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V

●• Low gate charge ( typical 95 nC)

●• Low Crss ( typical 75 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability