IRFP250 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-247-3
Description:	MOSFET N-CH 200V 33A TO-247
Documentation:	IRFP250 Datasheet (8 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRFP250 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	200 V
Current Rating	33.0 A
Case/Package	TO-247-3
Drain to Source Resistance (on) (Rds)	85.0 mΩ
Polarity	N-Channel
Power Dissipation	180W (Tc)
Input Capacitance	2.60 nF
Gate Charge	120 nC
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	33.0 A
Input Capacitance (Ciss)	2850pF @25V(Vds)
Power Dissipation (Max)	180W (Tc)