| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 32A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
●planar, DMOS technology.
●Features
●• 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V
●• Low gate charge ( typical 95 nC)
●• Low Crss ( typical 75 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
Fairchild
8 Pages / 0.65 MByte
IXYS Semiconductor
Trans MOSFET N-CH Si 200V 30A 3Pin(3+Tab) TO-247AD
ST Microelectronics
MOSFET N-CH 200V 33A TO-247
International Rectifier
N-Channel MOSFET, Vdss = 200V, Rds = 0.085Ω, Id = 30A, TO-247AC
VISHAY
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Fairchild
Trans MOSFET N-CH Si 200V 33A 3Pin(3+Tab) TO-247
Infineon
MOSFET N-CH 200V 33A TO-247
Samsung
N-channel power MOSFET, 200V, 30A
Harris
Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Intersil
33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
