TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 214 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.075 Ω |
Polarity | N-Channel |
Power Dissipation | 214 W |
Threshold Voltage | 4 V |
Input Capacitance | 2159 pF |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | 30A |
Rise Time | 43 ns |
Reverse recovery time | 186 ns |
Maximum Forward Voltage (Max) | 1.3 V |
Input Capacitance (Ciss) | 2159pF @25V(Vds) |
Input Power (Max) | 214 W |
Fall Time | 33 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Junction Temperature | -55℃ ~ 175℃ |
Power Dissipation (Max) | 214W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 16.13 mm |
Size-Width | 5.2 mm |
Size-Height | 21.1 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
8 Pages / 0.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
IXYS Semiconductor
Trans MOSFET N-CH Si 200V 30A 3Pin(3+Tab) TO-247AD
ST Microelectronics
MOSFET N-CH 200V 33A TO-247
International Rectifier
N-Channel MOSFET, Vdss = 200V, Rds = 0.085Ω, Id = 30A, TO-247AC
VISHAY
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Fairchild
Trans MOSFET N-CH Si 200V 33A 3Pin(3+Tab) TO-247
Infineon
MOSFET N-CH 200V 33A TO-247
Samsung
N-channel power MOSFET, 200V, 30A
Harris
Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Intersil
33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.