| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 50A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 4057pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 16.13 mm |
| Size-Width | 5.2 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP260MPBF is a HEXFET® fifth generation N-channel Power MOSFET utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
● Ease of paralleling
● Simple drive requirements
● Low static drain-to-source ON-resistance
Infineon
8 Pages / 0.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
IXYS Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AD
VISHAY
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
Infineon
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 50A; TO-247AC; PD 300W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
