| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 46.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Polarity | N-Channel |
| Power Dissipation | 280 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 5200pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 46.0 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 5200pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 280 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFP260PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
● Dynamic dV/dt rating
● Ease of paralleling
● Repetitive avalanche rated
● Isolated central mounting hole
● Simple drive requirements
Vishay Semiconductor
9 Pages / 1.72 MByte
Vishay Semiconductor
9 Pages / 1.72 MByte
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