TYPE | DESCRIPTION |
---|
Polarity | N-Channel |
Power Dissipation | 500 W |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 27.0 A |
HEXFET® Power MOSFET
●Benefits
● Low Gate Charge Qg results in Simple Drive Requirement
● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
● Fully Characterized Capacitance and Avalanche Voltage and Current
● Enhanced Body Diode dv/dt Capability
●Applications
● Hard Switching Primary or PFC Switch
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply
● High Speed Power Switching
● Motor Drive
International Rectifier
8 Pages / 0.08 MByte
International Rectifier
8 Pages / 0.58 MByte
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