| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 330 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 4.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 470 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 13000 pF |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 209A |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 13000pF @25V(Vds) |
| Input Power (Max) | 470 W |
| Fall Time | 130 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 470W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.87 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP2907PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
9 Pages / 0.21 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.03 MByte
International Rectifier
MOSFET MOSFT 75V 170A 4.5mOhm 180NC Qg
IRF
HEXFET Power MOSFET Die in Wafer Form
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 209A; TO-247AC; PD 470W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
International Rectifier
HEXFET Power MOSFET Die in Wafer Form
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
