| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N-Channel |
| Power Dissipation | 460 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 31.0 A |
| Rise Time | 115 ns |
| Input Capacitance (Ciss) | 5000pF @25V(Vds) |
| Input Power (Max) | 460 W |
| Fall Time | 53 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFP31N50LPBF is a N-channel enhancement-mode Power MOSFET with lower gate charge.
● Superfast body diode eliminates the need for external diodes
● Simple drive requirements
● Enhanced dV/dt capabilities offer improved ruggedness
● Higher gate voltage threshold offers improved noise immunity
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