TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 500 V |
Current Rating | 32.0 A |
Drain to Source Voltage (Vds) | 500 V |
Continuous Drain Current (Ids) | 32.0 A |
Rise Time | 120 ns |
SMPS MOSFET
●Applications
●Switch Mode Power Supply (SMPS)
●Uninterruptible Power Supply
●High Speed Power Switching
●Hard Switched and High Frequency Circuits
●Benefits
●Low Gate Charge Qg results in Simple Drive Requirement
●Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
●Fully Characterized Capacitance and Avalanche Voltage and Current
●Low RDS(on)
International Rectifier
8 Pages / 0.16 MByte
International Rectifier
8 Pages / 0.17 MByte
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.135Ω, ID = 32A
VISHAY
Trans MOSFET N-CH 500V 32A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 500V 32A 3Pin(3+Tab) TO-247AC
International Rectifier
HEXFET, N채널, Vd = 500V, Rds = 0.135Ω, Id = 32A, TO-247(TO-3P)
Vishay Siliconix
Trans MOSFET N-CH 500V 32A 3Pin(3+Tab) TO-247AC
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
MOSFET N-CH 500V 32A TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 32A I(D), 500V, 0.16Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
Vishay Semiconductor
Trans MOSFET N-CH 500V 32A 3Pin(3+Tab) TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
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