| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 330 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 65A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 4600pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 330W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRFP4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
● 175°C Operating temperature
● Low QG for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
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