| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 94.0 A |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| Power Dissipation | 580 W |
| Part Family | IRFP90N20D |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 94.0 A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 6040pF @25V(Vds) |
| Fall Time | 79 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 580000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
9 Pages / 0.09 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.023Ω; ID 94A; TO-247AC; PD 580W; VGS +/-30V
International Rectifier
200V Single N-channel Hexfet Power Mosfet In A To-247ac Package
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.023Ω, Id=94A)
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